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| FJY3012R NPN Epitaxial Silicon Transistor November 2006 FJY3012R NPN Epitaxial Silicon Transistor Features * Switching circuit, Inverter, Interface circuit, Driver Circuit * Built in bias Resistor (R=47K) * Complement to FJY4012R tm Eqivalent Circuit C C E S12 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25C unless otherwise noted Parameter Value 40 40 5 100 -55~150 150 200 Units V V V mA C C mW TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25C unless otherwise noted a Symbol RJA * Minimum land pad size. Parameter Thermal Resistance, Junction to Ambient Max 600 Units C/W Electrical Characteristics* Symbol V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb R TC = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Test Condition IC = 100 uA, IE = 0 IC = 1mA, IB = 0 VCB = 30 V, IE = 0 VCE = 5 V, IC = 1 mA IC = 10 mA, IB = 1 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.0 MHz MIN 40 40 Typ MAX Units V V 0.1 100 600 0.3 250 3.7 32 47 62 uA V MHz pF K Input Resistor * Pulse Test: PW300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJY3012R Rev. A FJY3012R NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC current Gain 1000 Figure 2. Collector-Emitter Saturation Voltage 1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = 5V R = 47K IC = 10IB R = 47K hFE, DC CURRENT GAIN 100 100 10 10 1 10 100 1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Power Derating 280 240 PC[mW], POWER DISSIPATION 200 160 120 80 40 0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE 2 FJY3012R Rev. A www.fairchildsemi.com FJY3012R NPN Epitaxial Silicon Transistor Package Dimensions SOT-523F Dimensions in Millimeters 3 FJY3012R Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22 |
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